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High current gain in monolithic hot-electron transistors
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High current gain in monolithic hot-electron transistors
High current gain in monolithic hot-electron transistors
JS
J.M. Shannon
J.M. Shannon
AG
A. Gill
A. Gill
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1 January 1981
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 17
(17)
,
620-621
https://doi.org/10.1049/el:19810435
Abstract
Monolithic hot-beam transistors have been made in silicon with a current gain of 20 and a MAG>20 dB. Hot electrons are injected at approximately 1.7 eV, cross a ∼250 Å wide degenerate base and surmount a 0.4 eV collector barrier.
Keywords
BIPOLAR TRANSISTORS
ELEMENTAL SEMICONDUCTORS
MONOLITHIC HOT-ELECTRON TRANSISTORS
CURRENT GAIN
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Cited by 18 articles