Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs
- 1 December 1994
- news
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4), 986-987
- https://doi.org/10.1016/0022-0248(94)91181-9
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982