Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
- 26 June 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 183 (1-2), 154-165
- https://doi.org/10.1016/s0168-583x(00)00683-2
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Energetics of Self-Interstitial Clusters in SiPhysical Review Letters, 1999
- Preferential Amorphization at Extended Defects of Self-Ion-Irradiated SiliconPhysical Review Letters, 1999
- Formation, evolution and annihilation of interstitial clusters in ion implanted SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- A Critical Regime for Amorphization of Ion Implanted SiliconMRS Proceedings, 1993
- Transient Phosphorus Diffusion Below the Amorphization ThresholdJournal of the Electrochemical Society, 1991
- Composition and structure of the native Si oxide by high depth resolution medium energy ion scateringSurface Science, 1991
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- A three-stage model for the development of secondary defects in ion-implanted siliconRadiation Effects, 1978
- Correlation of electron microscope studies with the electrical properties of boron implanted siliconRadiation Effects, 1970