Se Self-Diffusion in CdSe and the Defect Structure of the II-VI Compounds

Abstract

It has been found that the diffusion coefficient of Se in CdSe is inversely proportional to the Cd partial pressure for most of the CdSe solidus region. This simple relation implies interstitial Se as the diffusing defect. Other diffusion studies indicate that a similar situation prevails in all of the II-VI compounds.