Contribution to the determination of deep trapping levels in high resistivity films of n-type CdTe
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (2), 273-276
- https://doi.org/10.1051/rphysap:01977001202027300
Abstract
The study of both the dark conduction and the photoconductivity of n-type CdTe films enables us to emphasize the existence of a distribution of traps located in the band gap and to determine its characteristics : density per unit energy nt # 5 × 1013 cm-3 eV -1 width ΔE = E2 — E 1 # 0.10 eV and position Ec — E 1 = 0.50 eV as well as the position of the Fermi level E c — EFo # 0.66 eV in the band gapKeywords
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