Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure
- 1 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11), 870-872
- https://doi.org/10.1063/1.92203
Abstract
A new periodic n‐pdopingmultilayer structure in GaAs grown by molecular beam epitaxy is presented, in which the concentration of electrons and holes in the respective doping regions and thereby the conductivity can be varied simultaneously by more than 1012 carriers cm−2 per layer by an external potential difference e U n p applied between the constituent n‐ and p‐type layers. The intriguing properties of this prototype of a bulk multijunction field‐effect transistor structure result from a suppression of the direct electron‐hole recombination by a space‐charge potential periodically modulated in the direction of layer growth. The observed data are in excellent agreement with the calculated characteristics using the preselected design parameters of the structure.Keywords
This publication has 7 references indexed in Scilit:
- Modulation of two-dimensional conductivity in a molecular beam epitaxially grown GaAs bulk space-charge systemApplied Physics Letters, 1981
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- Periodic doping structure in GaAsProgress in Crystal Growth and Characterization, 1979
- Doping superlatticesJournal of Vacuum Science and Technology, 1979
- Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSeApplied Physics Letters, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972