Bias-Temperature-Stress Studies of Charge Retention in Dual-Dielectric, Charge-Storage Cells
- 1 November 1974
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 53 (9), 1741-1770
- https://doi.org/10.1002/j.1538-7305.1974.tb02814.x
Abstract
We present a simple, relatively efficient method to predict the nonvolatility of dual-dielectric, charge-storage cells. Using this method, charge-retention times of several hundred years can be predicted unambiguously from experiments of several days...Keywords
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