Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser
- 7 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (19), 1839-1840
- https://doi.org/10.1063/1.103063
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989
- Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW ConditionsJapanese Journal of Applied Physics, 1989
- GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg ReflectorJapanese Journal of Applied Physics, 1987