Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfaces
- 11 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (6), 619-621
- https://doi.org/10.1063/1.104547
Abstract
Low‐rate plasma oxidation of Si, involving a small oxygen concentration in a low‐power He plasma at low processing temperatures (∼350 °C), is shown capable of producing excellent interface properties, good uniformity, and low defect density. As an interfacial layer for plasma‐enhanced chemical vapor deposited (PECVD) SiO2 films, the plasma oxide is key to achieving high quality composite (plasma oxide/PECVD) oxide structures, which essentially match the electrical quality of thermal oxides. Such low‐temperature oxide films are suitable for critical device applications, such as the gate oxide in metal‐oxide‐semiconductor devices and the base passivation layer in advanced bipolar devices.Keywords
This publication has 6 references indexed in Scilit:
- X-ray reflectivity study of SiO2 on SiJournal of Vacuum Science & Technology A, 1990
- High-quality deposited gate oxide MOSFET's and the importance of surface preparationIEEE Electron Device Letters, 1989
- A structural and electrical comparison of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidationJournal of Applied Physics, 1988
- Electrical characteristics of very thin SiO2deposited at low substrate temperaturesIEEE Electron Device Letters, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986