Strained-layer quantum-well injection laser
- 1 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (7), 653-655
- https://doi.org/10.1063/1.94866
Abstract
Data are presented demonstrating room-temperature operation of a strained-layer quantum-well injection laser. The laser structure, grown by molecular beam epitaxy, consists of an active region with three InxGa1−xAs (x∼0.35) quantum wells (LZ ∼40 Å) separated by two GaAs barriers (LB ∼30 Å). These layers are centered in a larger GaAs collection/confinement region (LZ ∼1600 Å) bounded by AlyGa1−yAs ( y∼0.45) cladding layers. The lasers operate at λ∼1.0 μm with greater than 4-mW optical power output/facet under pulsed conditions at 300 K. Threshold current densities between 1000 and 2000 A/cm2 are obtained.Keywords
This publication has 7 references indexed in Scilit:
- All-binary AlAs—GaAs laser diodeIEEE Electron Device Letters, 1983
- Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983
- Electronic properties of strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983
- Ga(As,P) strained-layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constantJournal of Vacuum Science & Technology B, 1983
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983
- Stimulated emission in strained GaAs1−xPx-GaAs1−yPy superlatticesApplied Physics Letters, 1983
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974