A new method for making low-resistance ohmic contacts to p-InP is described. Using layer-by-layer evaporated Au-Zn (25 wt% net Zn)/Cr/Au metallisation, specific contact resistance as low as 4.5 × 10−5 Ωcm2 was obtained for p-InP with carrier concentration 2 × 1018 cm−3. The effects of annealing temperature and time on the contact resistances were investigated.