Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions
- 30 June 1992
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 52 (1-4), 201-223
- https://doi.org/10.1016/0022-2313(92)90245-5
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
- Spectroscopy of II–VI semiconductor solid solutions with structural phase transitionsJournal of Luminescence, 1992
- Excitons Bound to Te Impurities in CdS, ZnS, and Their Mixed Compounds with Wurtzite StructurePhysica Status Solidi (b), 1988
- Bond relaxation in Hg1−xCdxTe and related alloysJournal of Vacuum Science & Technology A, 1987
- Molecular coherent-potential approximation for zinc-blende pseudobinary alloysPhysical Review B, 1987
- Clustering Parameter and Internal Stress in III-V Ternary AlloysJapanese Journal of Applied Physics, 1985
- Calculation of Excess Free Energy of Mixing and Analysis of Phonon Spectra With Clustering Parameter in III—V Pseudobinary AlloysPhysica Status Solidi (b), 1982
- CdS1−xTex as Persistence‐type Semiconductor Mixed CrystalsPhysica Status Solidi (b), 1981
- A spectroscopical study of stabilization of the sphalerite structure in ZnS:Cu single crystalsPhysica Status Solidi (a), 1974
- Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloysJournal of Luminescence, 1970
- Optical Properties of Tellurium as an Isoelectronic Trap in Cadmium SulfideJournal of Applied Physics, 1968