256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

Abstract

A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based layered perovskite ferroelectric material “Y-l” and has no fatigue even after 10¹² destructive read and re-write stress cycles.