Stress Effects on Excitons Bound to Axially Symmetric Defects in Semiconductors

Abstract

The effect of uniaxial stress on exciton states which possess an axis of symmetry is calculated for various directions of the applied stress. The specific example of a $〈111〉$ symmetry axis is treated in detail. This example corresponds to the physical system of an exciton bound to an associated Cd-O pair in GaP. The model considers exchange splitting ($j-j$ coupling) of the exciton and the effects of anisotropy in the stress splitting of the hole states.