CVD silicon structures formed by amorphous and crystalline growth
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (3), 563-571
- https://doi.org/10.1016/0022-0248(83)90342-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Time‐Resolved Optical Reflectivity and Emissivity during and after Chemical Vapor Deposition of Amorphous and Crystalline SiliconJournal of the Electrochemical Society, 1983
- Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silaneApplied Physics Letters, 1982
- Thermodynamical stability conditions for the occurrence of hollow cores caused by stress of line and planar defectsJournal of Crystal Growth, 1982
- Stabilité mécano-chimique d'un interface fluide-fluide siège de réactions mono- et bi-moléculairesJournal de Physique, 1982
- Crystallization of amorphous silicon filmsPhysica Status Solidi (a), 1978
- Morphological stability analysis in chemical vapour deposition processes. IJournal of Crystal Growth, 1978
- A change of etch rate associated with the amorphous to crystalline transition in CVD layers of siliconSolid-State Electronics, 1977
- Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2SubstratesJapanese Journal of Applied Physics, 1975
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- In-Process Thickness Monitor for Polycrystalline Silicon DepositionJournal of the Electrochemical Society, 1972