Stability of AlAs in AlxGa1−xAs-AlAs-GaAs quantum well heterostructures
- 11 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24), 2436-2438
- https://doi.org/10.1063/1.102902
Abstract
Data are presented on the long‐term (≳8 yr) degradation of AlxGa1−xAs‐AlAs ‐GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs ‘‘buried’’ layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.Keywords
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