Determination of Γ electron and light hole effective masses in AlxGa1−xAs on the basis of energy gaps, band-gap offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells

Abstract

Experimental data of energy gaps, band offsets, and energy levels in Al_xGa_1−xAs/GaAs quantum wells are utilized for the determination of Γ electron and light hole effective masses in Al_xGa_1−xAs compounds on the basis of the author’s relations between these quantities. The temperature dependences of electron and light hole effective masses in GaAs are also obtained.