High temperature hall measurements on GaAs
- 15 June 1965
- journal article
- Published by Elsevier in Physics Letters
- Vol. 17 (1), 21-22
- https://doi.org/10.1016/0031-9163(65)90628-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Pressure Effect on Resistivity ofPhysical Review B, 1964
- Conduction Band Minima ofPhysical Review B, 1964
- Energy of Spectrum and Scattering of Current Carriers in Gallium ArsenideJournal of Applied Physics, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- High-Temperature Hall Coefficient in GaAsJournal of Applied Physics, 1960
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958
- Herstellung und elektrische Eigenschaften von InP und GaAsZeitschrift für Naturforschung A, 1955