GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas

Abstract

We have used x‐ray photoelectron spectroscopy to investigate electron cyclotron resonance oxygen plasma oxidation and hydrogen plasma deoxidation of GaAs surfaces. Experimental evidence shows that ECR oxidation at room temperature forms a stoichiometric oxide layer that is primarily composed of As₂O₅ and Ga₂O₃. A hydrogen plasma is shown to clean GaAs surfaces and recover surface order, even at room temperature. Sample heating (200–300 °C) expedites the removal of Ga₂O₃ and improves surface order. In addition, no significant differences in oxidation and deoxidation were observed for sample biasing, either positively or negatively.