THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
- 15 April 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (8), 313-315
- https://doi.org/10.1063/1.1653208
Abstract
Channeling‐effect measurements have been used to investigate the lattice location of boron atoms implanted into silicon at an energy of 56 keV and with doses in the interval 1014–1015 ions/cm2. Measurements have been made as a function of implantation temperature and subsequent anneal treatment. The effect of post‐bombardment with different doses of 680‐keV protons has also been investigated.Keywords
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