Pentacene field-effect transistors with a laminated Mylar™ foil as gate dielectric

Abstract

This work reports on pentacene based organic field-effect transistors with a gate dielectric made of a thin foil of Mylar™ transferred by a lamination process at moderate temperature. The process described here enabled the process of both bottom and top gate transistors, thus demonstrating the feasibility of laminating a dielectric film onto an organic semiconductor. Furthermore the authors point out the importance of the organic/insulator interface through the beneficial deposition of polymethyl methacrylate layer on the Mylar before evaporation of the pentacene layer in the case of bottom gate devices. A comparison is given with devices having a spun on organic dielectric.