Effect of applied external magnetic field on the relationship between the arrangement of the substrate and the resistivity of aluminium-doped ZnO thin films prepared by r.f. magnetron sputtering
- 31 October 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 164, 275-279
- https://doi.org/10.1016/0040-6090(88)90149-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- A New de Electroluminescent Device Using Sintered ZnS:Mn Phosphor-CeramicsJapanese Journal of Applied Physics, 1986
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- Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1985
- Influence of Energetic Oxygen Bombardment on Conductive ZnO FilmsJapanese Journal of Applied Physics, 1985
- Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applicationsJournal of Applied Physics, 1984