Electron Mobilities in SiC Polytypes
- 1 January 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (1), 50-52
- https://doi.org/10.1063/1.1709007
Abstract
Electron‐scattering mechanisms in SiC polytypes are discussed. It is shown that the mechanism which limits mobility from 300° to 800°K in n‐type SiC is probably intervalley scattering (in relatively pure samples). The dependence of electron mass on polytype enables one to study the scattering mechanisms by a comparison of Hall mobilities in two polytypes.Keywords
This publication has 13 references indexed in Scilit:
- High Electron Mobility of Cubic SiCJournal of Applied Physics, 1966
- Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite StructurePhysical Review B, 1966
- Exciton Complexes and Donor Sites inSiCPhysical Review B, 1965
- Luminescence ofSiC, and Location of Conduction-Band Minima in SiC PolytypesPhysical Review B, 1965
- Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband AbsorptionPhysical Review B, 1964
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- A Correlation between Theoretical Screw Dislocations and the Known Polytypes of Silicon CarbideZeitschrift für Kristallographie, 1957
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955