Comparison of 80‐keV D+ Ion Implantation with Thermal D2 Doping in Silica by FTIR and ESR Spectroscopy
- 1 March 1985
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 68 (3), 151-155
- https://doi.org/10.1111/j.1151-2916.1985.tb09655.x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Kinetic Behavior of H and D Atoms in γ‐Irradiated SiO2 as Studied by ESR SpectroscopyJournal of the American Ceramic Society, 1984
- Origins of Diffusivity-retardation of Tritium in Bombarded Silicon CrystalRadiochimica Acta, 1983
- ESR studies of damage processes in X-irradiated high purity a-SiO2:OH and characterization of the formyl radical defectThe Journal of Chemical Physics, 1983
- The diffusivities of fission-created or thermally-doped tritium in UO2Journal of Nuclear Materials, 1982
- Trapping and release of implanted D/H ions in fused silicaNuclear Instruments and Methods in Physics Research, 1982
- Permeation and reemission of deuterium, implanted in first wall materialsJournal of Nuclear Materials, 1981
- Deuterium Treatment and Infrared Transmission Spectra of Fused SilicaJournal of the American Ceramic Society, 1981
- Radiation damage in diagnostic window materials for the TFTRPublished by Office of Scientific and Technical Information (OSTI) ,1981
- Radiation-induced isotope exchange in vitreous silicaJournal of Applied Physics, 1979
- Point Defects and Radiation Damage Processes in α-QuartzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979