Breakdown of the-Conservation Rule in Si Nanocrystals
- 28 September 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (13), 2803-2806
- https://doi.org/10.1103/physrevlett.81.2803
Abstract
We show that light emission from different systems of silicon nanocrystals does behave as expected for indirect-band-gap quantum dots. Photoluminescence excited on the low energy part of the distribution of Si nanocrystals exhibits a set of narrow peaks associated with Si TA and TO momentum-conserving phonon-assisted optical transitions. These spectra allow us to determine the ratio of no-phonon transitions to TA and TO phonon-assisted processes over a wide range of confinement energies. The ratio between these recombination channels changes by 2 orders of magnitude with increasing confinement energy. For confinement energies above 0.7 eV the radiative transitions are governed by no-phonon quasidirect processes.Keywords
This publication has 17 references indexed in Scilit:
- The structural and luminescence properties of porous siliconJournal of Applied Physics, 1997
- Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum DotsPhysical Review Letters, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Size Dependence of Excitons in Silicon NanocrystalsPhysical Review Letters, 1995
- Electronic Spectroscopy and Photophysics of Si Nanocrystals: Relationship to Bulk c-Si and Porous SiJournal of the American Chemical Society, 1995
- Absorption and emission of light in nanoscale silicon structuresPhysical Review Letters, 1994
- Observation of phonon structures in porous Si luminescencePhysical Review Letters, 1993
- Identification of radiative transitions in highly porous siliconJournal of Physics: Condensed Matter, 1993
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990