Croissance epitaxiale du seleniure de zinc sur l'arseniure de gallium
- 31 March 1971
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 6 (3), 145-151
- https://doi.org/10.1016/0025-5408(71)90140-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Solid Solutions in the Pseudobinary (III-V)-(II-VI) Systems and Their Optical Energy GapsJournal of Applied Physics, 1969
- The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport ProcessJournal of the Electrochemical Society, 1969
- Vapor Transport Thermodynamics of GaP-Cl2-H2 System in an Open TubeJapanese Journal of Applied Physics, 1967
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964