Experimental range data for boron, phosphorus, and arsenic implanted into silicon are presented over the energy region from 0.15 to 1.8 MeV, 0.5 to 1.7 MeV, and 1.0 to 1.7 MeV respectively. The range energy dependence at these energies shows the expected predominance of electronic stopping in the case of boron and the increased importance of nuclear stopping for the two heavier ions.