n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT

Abstract

We have fabricated n‐p junction photovoltaic detectors in InSb using proton bombardment to create the n‐type layer. At 77 °K, diodes which were 20 mils in diameter had zero‐bias resistances of several hundred thousand ohms. The peak detectivity at 4.9 μ of these diodes with a 2π, 300 °K background was typically greater than 3×10¹⁰ cm Hz^1/2/W with the largest value observed being 10¹¹ cm Hz^1/2/W. Diode quantum efficiencies near 35% were observed.