Measurement of MOSFET constants

1 January 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (1), 10-12
https://doi.org/10.1109/edl.1982.25456

Abstract

A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.

Keywords

This publication has 5 references indexed in Scilit:

Experimental derivation of the source and drain resistance of MOS transistors
IEEE Transactions on Electron Devices, 1980
A new method to determine MOSFET channel length
IEEE Electron Device Letters, 1980
High-accuracy MOS models for computer-aided design
IEEE Transactions on Electron Devices, 1980
A simple theory to predict the threshold voltage of short-channel IGFET's
Solid-State Electronics, 1974
An accurate large-signal MOS transistor model for use in computer-aided design
IEEE Transactions on Electron Devices, 1972

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