Measurement of MOSFET constants
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (1), 10-12
- https://doi.org/10.1109/edl.1982.25456
Abstract
A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.Keywords
This publication has 5 references indexed in Scilit:
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