III–V strained layer supperlattices for long-wavelength detector applications: Recent progress

Abstract

Recent results of research on III–V InAsSb strained-layer superlattices are reviewed. Successful growth of microcrack-free InSb/InAsSb strained-layer superlatties has been achievedf by both molecular-beam epitaxy and metal–organic chemical vapor deposition techniques. The results provide encouraging indications that these III–V materials have superior structural stability to that of the Hg-rich HgCdTe alloys.