InAs/InSb nanowire heterostructures grown by chemical beam epitaxy
- 12 November 2009
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 20 (50), 505605
- https://doi.org/10.1088/0957-4484/20/50/505605
Abstract
We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111) B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.Keywords
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