Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
- 14 July 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (2), 249-252
- https://doi.org/10.1103/physrevlett.57.249
Abstract
We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.Keywords
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