Symmetric arsenic dimers on the Si(100) surface
- 3 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (5), 520-523
- https://doi.org/10.1103/physrevlett.56.520
Abstract
Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2×1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.Keywords
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