Effect of write field rise times on the switching thresholds of pseudo spin valve memory cells

Abstract

A number of experiments were performed on submicron, giant magnetoresistance, pseudospin valve, memory elements which showed that the write thresholds are significantly reduced if the rise time of the word write pulses are less than 2 ns and the elements are in the proper initial states. Tested elements had cell widths of 0.3 and 0.17 μm and total lengths of about 1.8 μm. The active lengths were 1.0 to 1.2 μm. Rise times used in the tests were 1.25, 2, and 4 ns.