Electronic Structure of Inversion Layers in Many-Valley Semiconductors

Abstract

We outline a new theory of the electronic structure of inversion layers in many-valley semiconductors which includes broken-symmetry many-body effects. This theory describes charge-density waves which account for the experimentally observed (i) degeneracy and (ii) occupancy of the electron levels, and (iii) the high cyclotron mass in the (111) surface $n$-type inversion layers of silicon. It reduces to earlier theories at the Si (100) surface, where theory and experiment are in good agreement.