Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
- 1 January 1984
- Vol. 34 (1-2), 203-208
- https://doi.org/10.1016/0042-207x(84)90128-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal siliconThin Solid Films, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977