Lateral Traveling Solvent Growth in Indium Arsenide

Abstract

A new type of traveling solvent technique has been developed for making p‐n‐p or n‐p‐n semiconductor structures with a highly doped middle layer. It is demonstrated on indium arsenide p‐n‐p structures. The process involves the fabrication of perfectly wetted semiconductor‐metal‐semiconductor sandwiches by a ``saturated dot'' technique and a traveling solvent process in a temperature gradient parallel to the sandwich plane. Over areas of about 1 mm×1 mm, middle layers as thin as 12 μ were obtained. An analysis is given describing the essential features of the process and giving limits for process temperature and temperature gradient. Some process data are obtained by experiments of normal traveling solvent growth carried out in the same system.