A reliable scheme for fabricating sub-5 nm co-planar junctions for single-molecule electronics
- 20 September 2002
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 13 (5), 659-662
- https://doi.org/10.1088/0957-4484/13/5/323
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithographyApplied Physics Letters, 2002
- Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Fabrication of co-planar metal-insulator-metal solid state nanojunctions down to 5 nmThe European Physical Journal Applied Physics, 1999
- Fabrication of metallic electrodes with nanometer separation by electromigrationApplied Physics Letters, 1999
- Shadow evaporation method for fabrication of sub 10 nm gaps between metal electrodesMicroelectronic Engineering, 1999
- Controlled fabrication of metallic electrodes with atomic separationApplied Physics Letters, 1999
- Conductance of a Molecular JunctionScience, 1997
- Fabrication of 5 nm Resolution Electrodes for Molecular Devices by Means of Electron Beam LithographyJapanese Journal of Applied Physics, 1997
- Fabrication and AFM characterization of a co-planar tunnel junction with a less than 30 nm interelectrode gapNanotechnology, 1994
- 10 nm electron beam lithography and sub-50 nm overlay using a modified scanning electron microscopeApplied Physics Letters, 1993