Contacts between amorphous metals and semiconductors

Abstract

The letter describes the relative enhancement of the thermal stability of Schottky barriers on both silicon and gallium arsenide that can be achieved using thin films of amorphous Ni-Nb and Ta-Ir alloy, the latter alloy being among the most stable fabricated to date, with less than 5% degradation of the barrier height after 2.5 h at 500°C.