Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6A), L970
- https://doi.org/10.1143/jjap.30.l970
Abstract
We investigated the relationship between current gain and emitter resistance of the heterojunction bipolar transistor using an SiC x terminated by fluorine atoms (SiC x :F) widegap emitter and achieved high current gain and low emitter resistance. The emitter resistance of about 40 Ω·µm2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics. The compatibility of high current gain and low emitter resistance will lead to higher cut-off frequency due to decreased emitter charge storage.Keywords
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