Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 841-844
- https://doi.org/10.1109/iedm.1997.650512
Abstract
A simple model is proposed, which is able to calculate V/sub TH/ standard deviation due to random dopant placement in the channel, for arbitrary vertical impurity distributions. Substantial decrease in V/sub TH/ fluctuation, while keeping V/sub TH/ the same, is confirmed for low surface impurity channel MOSFETs, in agreement with the model prediction.Keywords
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