Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Abstract

${\mathrm{Ga}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{3}}{\mathrm{(Gd}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{3}}\mathrm{)}$ was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal–semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 °C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.