Real-space determination of atomic structure and bond relaxation at the-Si(111) interface
- 25 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (8), 827-830
- https://doi.org/10.1103/physrevlett.54.827
Abstract
The atomic structure at the interface of a 180° rotated single-crystal film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.
Keywords
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