a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°C
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputteringApplied Physics Letters, 1997
- Small and large deformation of thick and thin-film multi-layers: Effects of layer geometry, plasticity and compositional gradientsJournal of the Mechanics and Physics of Solids, 1996
- The thermomechanical integrity of thin films and multilayersActa Metallurgica et Materialia, 1995
- Effects of Plasma Enhanced Chemical Vapor Deposition Substrate Heating on the Electrical Properties of α‐Si:H Thin Film TransistorsJournal of the Electrochemical Society, 1994