20-nm Resolution of electron lithography for the nano-devices on ultrathin SOI film
- 1 January 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: C
- Vol. 19 (1-2), 189-192
- https://doi.org/10.1016/s0928-4931(01)00456-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technologyMaterials Science and Engineering B, 2000
- Silicon on insulator material technologyElectronics Letters, 1995
- Fabrication of sub-10 nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Low-energy electron beam lithography with 30 nm resolutionSemiconductor Science and Technology, 1993
- Oxidation of sub-50 nm Si columns for light emission studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Fabrication of 25 nm gold-bridges and observation of ballistic and quantum interference effectsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Microfabrication below 10 nmApplied Physics Letters, 1990
- Ultrathin poly(methylmethacrylate) resist films for microlithographyJournal of Vacuum Science & Technology B, 1989
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam ExposureJapanese Journal of Applied Physics, 1985
- Spatial resolution limits in electron beam nanolithographyJournal of Vacuum Science & Technology B, 1983