Annealing of Infrared Defect Absorption Bands in 40-MeV Electron-Irradiated Silicon
- 1 May 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (5), 1787-1788
- https://doi.org/10.1063/1.1703129
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959