Effect of growth parameters on TiO2 thin films deposited using MOCVD
- 2 August 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 179 (3-4), 522-538
- https://doi.org/10.1016/s0022-0248(97)00144-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Computer simulation study of the MOCVD growth of titanium dioxide filmsJournal of Crystal Growth, 1997
- TiO2 thin films by chemical vapour deposition: control of the deposition process and film characterisationJournal of Materials Chemistry, 1993
- Transport phenomena in vertical reactors for metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Growth Kinetics of CVD TiO[sub 2]: Influence of Carrier GasJournal of the Electrochemical Society, 1990
- Statistical equipment modeling for VLSI manufacturing: an application for LPCVDIEEE Transactions on Semiconductor Manufacturing, 1990
- Computed results for the deposition rates and transport phenomena for an MOCVD system with a conical rotating substrateJournal of Crystal Growth, 1989
- In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactionsJournal of Crystal Growth, 1987
- Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptnessJournal of Crystal Growth, 1987
- Silicon Epitaxial Growth by Rotating Disk MethodJournal of the Electrochemical Society, 1972
- Vapor Deposition of TiO2Japanese Journal of Applied Physics, 1968