A predictive reliability model for PMOS bias temperature degradation
- 1 January 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Bias temperature degradation is studied in p-MOSFETs. The physical mechanisms responsible for degradation over a wide range of stress bias and temperature have been identified. A novel scaling methodology is proposed that helps in obtaining a simple, analytical model useful for reliability projection.© IEEKeywords
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