Si-SiO2 interface trap production by low-temperature thermal processing
- 17 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (7), 514-516
- https://doi.org/10.1063/1.98383
Abstract
Post‐metal annealing of aluminum gate metal‐oxide‐semiconductor capacitors can produce, as well as anneal, interface traps at the Si‐SiO2 interface. The production mechanism is shown to be a thermal decomposition of passivated traps. Mechanisms involving interactions with atomic or molecular hydrogen are inconsistent with the experimental data.Keywords
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