Analysis of coherent and incoherent phenomena in photoexcited semiconductors: A Monte Carlo approach

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Abstract
A generalized Monte Carlo procedure for the ultrafast dynamics of photoexcited carriers in a semiconductor is presented, where the coherence in the carrier system, as well as band renormalization and excitonic effects in the Hartree-Fock approximation are fully taken into account. The details of the coherent generation process, the energy relaxation, and dephasing of the carriers are analyzed. The approach presents a numerical method for the investigation of phenomena occurring close to the band gap and those typical for the relaxation of hot carriers.